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| New Product SUD50P04-09L Vishay Siliconix P-Channel 40-V (D-S), 175 C MOSFET PRODUCT SUMMARY VDS (V) - 40 rDS(on) () 0.0094 at VGS = - 10 V 0.0145 at VGS = - 4.5 V ID (A)d - 50 - 50 FEATURES * TrenchFET(R) Power MOSFETS * 175 C Junction Temperature Available RoHS* COMPLIANT TO-252 S G Drain Connected to Tab G D S Top View Ordering Information: SUD50P04-09L SUD50P04-09L (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 C TC = 25 C TC = 125 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit - 40 20 - 50d - 50d - 100 - 50 125 136c 3b, c - 55 to 175 mJ W C A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Duty cycle 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72243 S-71660-Rev. B, 06-Aug-07 www.vishay.com 1 b Symbol t 10 sec Steady State RthJA RthJC Typical 15 40 0.82 Maximum 18 50 1.1 Unit C/W New Product SUD50P04-09L Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 32 V, VGS = 0 V VDS = - 32 V, VGS = 0 V, TJ = 125 C VDS = - 32 V, VGS = 0 V, TJ = 175 C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 24 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 50 A, TJ = 125 C VGS = - 10 V, ID = - 50 A, TJ = 175 C VGS = - 4.5 V, ID = - 18 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time c a Symbol Test Conditions Min - 40 -1 Typ Max Unit -3 100 -1 - 50 - 150 V nA A A - 50 0.0075 0.0094 0.014 0.017 0.0115 73 4800 0.0145 gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = - 5 V, ID = - 24 A S VGS = 0 V, VDS = - 25 V, f = 1 MHz 700 550 102 150 pF VDS = - 20 V, VGS = - 10 V, ID = - 50 A 18.5 27 10 15 90 220 220 - 50 - 100 nC VDD = - 20 V, RL = 0.4 ID - 50 A, VGEN = - 10 V, RG = 6 C)b 60 145 140 ns Source-Drain Diode Ratings and Characteristics (TC = 25 IS ISM VSD trr A V ns IF = - 50 A, VGS = 0 V IF = - 50 A, di/dt = 100 A/s - 1.0 55 - 1.5 85 Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72243 S-71660-Rev. B, 06-Aug-07 New Product SUD50P04-09L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 100 VGS = 10 thru 5 V 4V 80 I D - Drain Current (A) I D - Drain Current (A) 80 100 60 60 40 40 TC = 125 C 20 25 C - 55 C 0 0.0 20 3V 2V 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 120 TC = - 55 C 100 g fs - Transconductance (S) 25 C r DS(on)- On-Resistance () 125 C 80 0.016 0.020 Transfer Characteristics 0.012 VGS = 4.5 V 60 0.008 VGS = 10 V 40 20 0.004 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transconductance 8000 7000 V GS - Gate-to-Source Voltage (V) 8 6000 5000 4000 3000 2000 1000 Crss 0 0 5 10 15 20 25 30 35 40 0 0 Coss Ciss 10 On-Resistance vs. Drain Current VDS = 20 V ID = 50 A C - Capacitance (pF) 6 4 2 20 40 60 80 100 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 72243 S-71660-Rev. B, 06-Aug-07 Gate Charge www.vishay.com 3 New Product SUD50P04-09L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 1.8 VGS = 10 V ID = 50 A I S - Source Current (A) 100 1.6 r DS(on) - On-Resistance (Normalized) 1.4 TJ = 150 C 1.2 10 TJ = 25 C 1.0 0.8 1 - 25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) 0.6 - 50 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 THERMAL RATINGS 60 50 rDS(on) Limited I D - Drain Current (A) I D - Drain Current (A) 40 100 IDM Limited P(t) = 0.0001 30 20 ID(on) Limited 10 TC = 25 C Single Pulse BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 100 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (C) 1 0.1 Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Safe Operating Area 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72243. www.vishay.com 4 Document Number: 72243 S-71660-Rev. B, 06-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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